机译:基于晶格匹配和极化匹配的AllnN / GaN异质结构的共振隧穿二极管的负差分电阻特性的理论研究
State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
机译:In_(0.17)Al_(0.83)N / GaN谐振隧穿二极管的负差分电阻特性的可再现性-理论研究
机译:甘曲谐振隧道二极管的负差分电阻特性与季莲作为屏障
机译:低铝含量AlGaN / GaN双势垒共振隧穿二极管的室温负差电阻特性的可靠性
机译:具有可再生的室温负差分电阻的可靠GaN基谐振隧穿二极管
机译:基于非极性GaN的VCSEL与晶格匹配的纳米多孔分布式布拉格反射镜
机译:在几乎晶格匹配的柔性金属箔上制造全色GaN基发光二极管
机译:插入在两个AIN层之间的GaN厚度对晶格匹配的AllnN / AIN / GaN / AIN / GaN双通道异质结构的输运性能的影响