单晶黑硅微结构对其反射率影响的研究

摘要

采用 Ag 辅助化学腐蚀法在不同 H2 O2浓度、腐蚀温度和腐蚀时间条件下制备了单晶黑硅微结构,并系统地研究了这种微结构对表面反射率的影响规律。采用场发射扫描电子显微镜对样品形貌进行了观察,并利用分光光度计对样品的表面反射率进行了测试,最终采用陷光模型对黑硅微结构与其反射率的关系进行了深入分析。发现当腐蚀液为7.8 mol/L HF和0.6 mol/L H2 O2混合液、腐蚀温度为20℃以及腐蚀时间为90 s 时,所制备黑硅的腐蚀深度为900 nm,其表面平均反射率为0.98%(400~900 nm)。%In this study,single-crystalline black silicon microstructures were fabricated by Ag-assisted chemical etching method under different H2 O2 concentration,etching temperature and etching time.Besides,the effects of the black silicon microstructures on the surface reflectance were systematically studied.Scanning electron mi-croscope and spectrophotometer were used to observe the microstructures and to test the surface reflectance,re-spectively.In addition,the relation between the microstructures and reflectance was deeply investigated by u-sing two light-trapping models.Finally,single-crystalline black silicon with average reflectance of 0.98% from 400 to 900 nm was obtained by etching in a 7.8 mol/L HF and 0.6 mol/L H2 O2 mixed solution for 90 s at 20 ℃resulting in an etching depth of 900 nm.