Anti-Reflectance Optimization of Secondary Nanostructured Black Silicon Grown on Micro-Structured Arrays

摘要

Owing to its extremely low light absorption, black silicon has been widely investigated and reported in recent years, and simultaneously applied to various disciplines. Black silicon is, in general, fabricated on flat surfaces based on the silicon substrate. However, with three normal fabrication methods—plasma dry etching, metal-assisted wet etching, and femtosecond laser pulse etching—black silicon cannot perform easily due to its lowest absorption and thus some studies remained in the laboratory stage. This paper puts forward a novel secondary nanostructured black silicon, which uses the dry-wet hybrid fabrication method to achieve secondary nanostructures. In consideration of the influence of the structure’s size, this paper fabricated different sizes of secondary nanostructured black silicon and compared their absorptions with each other. A total of 0.5% reflectance and 98% absorption efficiency of the pit sample were achieved with a diameter of 117.1 μm and a depth of 72.6 μm. In addition, the variation tendency of the absorption efficiency is not solely monotone increasing or monotone decreasing, but firstly increasing and then decreasing. By using a statistical image processing method, nanostructures with diameters between 20 and 30 nm are the majority and nanostructures with a diameter between 10 and 40 nm account for 81% of the diameters.