This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide film growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20 V are enhanced, and the leakage current of the aluminum composite oxide film is reduced through incorporation of Si oxide spec ies.
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机译:Evolution and Development of the Information Concept in Biological Systems: From Empirical Description to Informational Modeling of the Living Structures
机译:Types of biogenic quartz and its coupling storage mechanism in organic-rich shales: A case study of the Upper Ordovician Wufeng Formation to Lower Silurian Longmaxi Formation in the Sichuan Basin, SW China