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Manipulation of Terahertz Radiation Using Vanadium Dioxide

         

摘要

Vanadium dioxide(VO2) is a phase transition material which undergoes a reversible metal-insulator transition(MIT) when triggered by thermal, photo, electrical, and even stress. The huge conduction change of VO2 renders it a promising material for terahertz(THz) manipulation. In this paper, some interesting works concerning the growth and characteristics of the VO2 film are selectively reviewed. A switching of THz radiation by photo-driven VO2 film is demonstrated. Experiments indicate an ultrafast optical switching to THz transmission within 8 picoseconds, and a switching ratio reaches to over 80% during a wide frequency range from 0.3 THz to 2.5 THz.

著录项

  • 来源
    《电子科技学刊》 |2014年第3期|255-261|共7页
  • 作者

    Qi-Ye Wen;

  • 作者单位

    State Key Laboratory of Electronic Films and Integrated Devices;

    University of Electronic Science and Technology of China;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 TB383.2;
  • 关键词

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