类氖氙离子LM n双电子复合模拟谱

摘要

The atomic processes emitting X-photon include radiative recombination ( RR) , resonant excitation (RE), resonant recombination (RER) and direct excitation (DE) within the energy range of dielectronic re-combination ( DR). The cross sections of those atomic processes were calculated by using relativistic configura-tion interaction ( RCI) method. We compared cross sections of those atomic processes with that of DR process, and analyzed the influence of those processes on DR process. The results show that the RR cross section decrea-ses with the increase of electron beam energy quickly;within the energy distribution of DR process, the RR cross section is almost a constant, which can be treated as background;the effect of RE and RER can be negligible;with the increase of electron beam energy, the cross section of electron impact DE becomes large, the DR cross section can’ t distinguish from high Rydberg states;the cross section of electron impact become larger and larger with the increase of electron beam energy. The dielectronic recombination spectrum of neon-like xenon was cal-culated by using relativistic configuration interaction ( RCI ) method; the corresponding present results are in good agreement with reliable values within the inaccuracy.%在双电子复合过程发生的能量范围内，发射X光子的原子过程除双电子复合过程外还有辐射复合、共振激发、共振复合以及直接激发原子过程。本文使用相对论组态相互作用方法计算了这些过程的截面，比较了在双电子复合过程发生的能量范围内这些原子过程的截面与双电子复合过程截面，探讨了这些过程对双电子复合过程的影响。研究结果表明，辐射复合截面随入射电子束能量的增大迅速减小，在双电子复合能量范围内几乎为一常数，可以作为本底来处理；共振激发和共振复合过程对双电子复合过程的影响可以忽略不计；当入射电子束能量高于靶离子的第一激发能时，电子碰撞直接激发截面与高Rydberg态的截面连成一片，随着入射电子束能量的增加，电子碰撞直接激发截面越来越大，这时必须考虑直接激发过程。使用相对论组态相互作用方法计算了类氖氙离子的双电子复合截面，其结果与已有的部分实验和理论结果很吻合。