负电子亲和势光电阴极50年史话

摘要

本文是负电子亲和势光电阴极发现50周年的纪念文章，简要回顾了过去的成绩，现在的困难及今后的展望。经过近30年的努力，我国 MOCVD 生长的反射式 GaAs 光电阴极的积分灵敏度已达到3516μA/lm，目前存在的困难是光电阴极寿命问题，寿命问题解决了，高性能微光像增强器以及EBAPS 数字器件可以缩短与西方的差距。如果高灵敏度长寿命的 GaAs：O-Cs 光电阴极真正取代了目前大科学装置中的铜阴极，基于我国大科学装置的基础研究才会迎来真正的科学春天。%This article is the fifty year anniversary of the discovery photocathode of negative electron affinity, and a brief review of the past achievements, the present difficulties and future outlook. After nearly 30 years of efforts, the integral sensitivity of the MOCVD growth of GaAs reflection-mode photocathode in China has reached 3516 μA/lm. Existing difficulties is photocathode life problem, life problem resolved, LLL image intensifier and EBAPS digital device of high performance can shorten the gap with the West. If the GaAs:O-Cs photocathode of high sensitivity and long life truly replace the copper cathode in the current big scientific device, based on the basic research of China's big scientific device will usher in a real scientific spring.