采用反应离子体刻蚀机结合CHF3+SF6+O2混合气体[1,2]刻蚀二氧化硅的工艺研究,并且采用正交试验方法[3]调整刻蚀参数,得出影响刻蚀倾角的主要因素是CHF3和SF6。适当增加CHF3流量有助于形成陡直的刻蚀倾角;适当增加SF6流量并减小CHF3流量有助于形成平缓的刻蚀倾角。通过对实验参数进行整体优化处理,最终实现了垂直、平缓的刻蚀倾角。为采用二氧化硅作为刻蚀掩膜以及终端结构提供了帮助。%This letter reports the processing of Silicon oxide(SiO2)with Reactive Ion Etching(RIE)using CHF3+SF6+O2.According to the orthogonal experiment,CHF3 and SF6 are main inlfuencing factors.Adjustment and Optimization of parameters can work out vertical side wal and gently side wal .The structure wil be helpful to process the substrate and terminal structure.
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