A New Structure High—Voltage Power MOSFET with Improved Body Diode Switching Speed

摘要

A new structure for high-voltage power MOSFETs is proposed. The molybdenum-silicon Schot-tky contact is integrated into each cell of the power MOS-FET to improve its body-diode switching speed. It has been demonstrated that a 500V/2A power MOSFET with a Schottky-contact-area ratio of 26% exhibits only a half of the body-diode recovery charge of a conventional MOS-FET without Schottky contact.