衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响

摘要

Gallium doped zinc oxide (ZnO: Ga) thin films were deposited on quartz substrates by pulsed laser deposition. The effects of substrate temperature on the structure, surface morphology and photoelectric properties of the ZnO : Ga thin films were investigated. The obtained thin films possess a polycrystalline hexagonal wurtzite structure. With the increase of substrate temperature, the intensity of diffraction peaks increases significantly and the grain size increases.The lowest resistivity is 8.5×10-4Ω · cm and the transmittance in the visible range is over 87％ for the prepared ZnO: Ga thin films when the substrate temperature is 450 ℃.%利用脉冲激光沉积法在石英衬底上制备了镓掺杂氧化锌(ZnO:Ga)透明导电薄膜,研究了衬底温度对薄膜的结构、表面形貌和光电性能的影响.研究表明:制备的ZnO:Ga薄膜是具有六角纤锌矿结构的多晶薄膜.随着衬底温度的增加,衍射峰明显增强,晶粒尺寸增大.当衬底温度为450℃时,薄膜的最低电阻率为8.5×10<'-4>Ω·cm,在可见光区平均光透过率达到87%以上.