针对正面光照、背面光照及双面光照三种不同光照条件,利用TCAD半导体器件仿真软件全面系统地分析了背表面场结构参数对P型双面单晶硅太阳电池内量子效率(IQE)和短路电流密度(JSC)的影响.仿真结果表明:在300~700 nm短波段范围,双面光照情况下的IQE主要由BSF结构对背面光照光生载流子的影响决定.在700~1200 nm长波段范围,双面光照情况下的IQE主要由BSF结构对正面光照光生载流子的影响决定.当BSF扩散深度一定时,随着BSF表面浓度的增大,双面光照情况下JSC的变化特点与背面光照情况一致.BSF结构的变化对正面光照情况下JSC的影响较小(ΔJSC=0.26×10-3A/cm2),而BSF结构参数的变化对背面光照情况下JSC的影响较大(ΔJSC=10.59×10-3A/cm2),BSF结构对背面光照光生载流子的影响是导致双面光照JSC出现大幅变化的主要因素.%Theinfluencesofback surface field structural parameters onP-typebifacial monocrystalline siliconsolar cell'sinternal quantum efficiency (IQE) and short-circuitcurrent density (JSC)were studied comprehensively and systematically byusing TCADsemiconductor device simulation software under three different illumination conditionsof front illumination, rear illumination and double illumination. The simulation results show thatthe internal quantum efficiency under double illumination conditions is mainlydetermined by the influencesofback surface field structure on the photo-carrier produced by rear illumination excitation in the short wave range of 300-700nm. The internal quantum efficiency under double illumination conditions is mainlydetermined by the influencesofback surface field structure on the photo-carrier produced by front illumination excitation in the long wave range of 700-1200nm. When the value of diffusion depth of BSF is fixed, the characteristic of change of the short-circuitcurrent density under double illumination conditions is consistent withthat underthe rear illumination with the increase of BSF surface concentration. The change of back surface field structure has less effect on the short-circuitcurrent density under front illumination (ΔJSC=0.26×10-3A/cm2), and the change of back surface field structure has greater effect on the short-circuitcurrent density under rear illumination (ΔJSC=10.59×10-3A/cm2).Theinfluenceofback surface field structure onthe photo-carrier produced by rear illumination excitationisthe main influential factor of the serious fluctuation in the short-circuitcurrent density.
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