Drain Bias Effect on Characteristics of Leakage Current for Various Back-Surface State Density

摘要

Device leakage current for drain bias effect has been investigated. Furthermore, the back-surface state density is a key parameter for lower the reverse sub-threshold leakage current under smaller drain operation. In addition, the leakage current of inverted-stagger structure have also qualities by the additional top gate applied to investigate further leakage current flow. At the same time, drain bias on off-state mechanism was evidenced by different device back and bulk trap state density. Display application for high drain operation was also introduced when device off-state driving region was different.