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基于4级Uce检测的大功率IGBT过流保护策略

     

摘要

为了优化大功率绝缘栅双极晶体管(IGBT)模块的过流保护策略,掌握IGBT所处的工作状态,为IGBT提供安全可靠的保护,提出了一种针对不同过流等级的过流保护策略,并且详细介绍了该策略的设计原理和设计方法.该策略可以有效地检测IGBT的过流故障信息,可分别针对过载、硬短路和软短路等不同类型的过流故障提供可靠的关断保护.搭建了4500 V/900 A的IGBT模块测试平台,测试结果表明,该方案能够准确检测出过载、硬短路和软短路情况,并在短时间内对短路故障实现了可靠的关断,与软关断策略相结合,硬短路关断时间为5μs,关断过压尖峰200 V,软短路关断时间约为10μs,关断过压400 V.%In order to optimize the over-current protection strategy of high-power insulated gate bipolar transistor (IGBT)module ,grasp the IGBT's working state ,provide safe and reliable protection for IGBT ,a over-current protection strategies for different levels was proposed,and the design principle and design method of the strategy were introduced. This strategy could detect IGBT over-current fault information effectively ,provide reliable shut off for overload,hard short circuit,soft short circuit and any other different fault. A test platform for 4500 V/900 A IGBT module was set up,combined with a soft off strategy,the types of overload,short circuit and soft short circuit were detected exactly,and the IGBT model was shut off reliably at a short time. The close time for hard short circuit is 5μs , overpressure of shut off peak is 200 V,the close time for soft short circuit is 10μs,overpressure of shut off peak is 400 V.

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