CMOS反相器电压传输特性的数值计算

摘要

We design a 0.35um P-Channel LDD device, and simulate it using the Medici program. We find a simple and effective numerical arithmetic to describe the I-V characteristics of the device and give the mathematic expressions. And then, we calculate the voltage transmit characteristics, and the result is fairly consistent with the theoretical analysis.%设计了一种0.35um沟长的LDD PMOS器件,并用Medici软件进行数值仿真,找到一种简单有效的描述器件伏安特性的数值算法,给出相应的数学表达式,并利用这些表达式计算亚微米CMOS反相器的电压传输特性,计算结果与理论分析符合较好.