1.IntroductionThe research of the TD1 and TD2 al-loys based on intermetallic compound Ti3Al,which possesses high temperature capabilityfrom 650 to 700℃ was conducted.However,the limitation used at high temperature isimposed by oxidation and degradation ofcreep strength,and relatively little know-
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机译:Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor