THEORY AND PRACTICE ON DETERMINATION OF DEEP LEVEL PROFILES IN MULTIHIGH-DENSITY-LEVEL CASE

摘要

This work is an improvement of the theory proposed by Qin Guogang and C. T. Sah for determination of deep level profiles in the multi-level ease. The previous theory cannot be applied to the ease when a level whose density is comparable to the carrier density exists between the Fermi level and the deep level under study or when the deep level under study locates near the middle of the forbidden gap. The present work has overcome those restrictions so that it is applicable to more general cases. For the proton-implanted CZ-Si sample, the density profile of E(0.22), second acceptor level of divacancies, has been calculated in the presence of highly concentrated oxygen-vacancy level E(0.15) and has been compared with the profile of the same level E(0.22) calculated without considering the existence of E(0.15).