首页> 中文期刊> 《中国科学 》 >High mobility organic semiconductors for field-effect transistors

High mobility organic semiconductors for field-effect transistors

         

摘要

Organic field-effect transistors(OFETs) are attracting more and more attention due to their potential applications in low-cost, large-area and flexible electronic products. Organic semiconductors(OSCs) are the key components of OFETs and basically determine the device performance. The past five years have witnessed great progress of OSCs. OSCs used for OFETs have made rapid progress, with field-effect mobility much larger than that of amorphous silicon(0.5?1.0 cm2/(V s)) and of up to 10 cm2/(V s) or even higher. In this review, we demonstrate the latest progress of OSCs for OFETs, where more than 50 representative OSCs are highlighted and analyzed to give some valuable insights for this important but challenging field.

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号