氧化钨无机半导体材料因其特有的物理化学性能以及在气敏、光催化、光致变色、电致变色和场发射等领域的广泛应用,得到人们的普遍关注.以钨酸钠为前驱体,硫酸钠为结构导向剂,采用水热合成法制备了六方相三氧化钨,并应用X射线衍射(XRD),扫描电镜(SEM),高分辨透射电镜(HRTEM),傅里叶变换(FFT)等微观分析手段对三氧化钨粉体进行表征和分析.结果表明:在pH≈1,最终反应温度160℃,反应时间12 h可得到平均直径约为85 nm,长度约为2.2μm六方相氧化钨纳米线.并由HRTEM和FFT图像可分析得知,六方相三氧化钨纳米线晶体生长方向主要沿着[001]轴向,其晶面间距为0.3880 nm.%Tungsten oxides inorganic semiconductor materials have been paid intensive attentions because of its unique physical and chemical properties as well as various applications including gas sensors, photocatalysis, photochromic devices,electrochromic devices and field emission. Hexagonal tungsten trioxide( h-WO3 ) was synthesized using hydro-thermal method through precursor of Na2 WO4·2H2 O by addition of Na2 SO4 . The structure and morphology of the samples were characterized by X-Rays Diffraction(XRD),field emission scanning electron microscopy(SEM),high resolution transmission electron microscopy( HRTEM) and Fast Fourier Transform( FFT) . Results show that hexagonal tungsten trioxide nanowires with 2.2 μm in length,85 nm in diameter can be obtained by using the heat treatment temperature of 160 ℃ for 12 h. Based on the HRTEM and FFT characterizations and crystal structure analyses, the growth direction of the tungsten oxide nanowires was determined along[001]direction with an inter-planar distance of 0.3880 nm.
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