首页> 中文期刊>中国康复理论与实践 >电针神庭、百会对脑缺血再灌注大鼠学习记忆能力和海马CA1区环磷酸腺苷效应元件结合蛋白及其磷酸化水平的影响

电针神庭、百会对脑缺血再灌注大鼠学习记忆能力和海马CA1区环磷酸腺苷效应元件结合蛋白及其磷酸化水平的影响

     

摘要

目的:探讨电针神庭、百会治疗脑卒中后认知功能障碍的机制。方法45只Sprague-Dawley大鼠随机分为假手术组、模型组和电针组,每组15只。后两组线栓法复制大鼠大脑中动脉缺血2 h再灌注模型。电针组于造模后24 h开始电针神庭和百会,共7 d。每天电针后行Morris水迷宫测试。治疗后,取大鼠脑组织TTC染色测量脑梗死体积,免疫组化检测海马CA1区环磷酸腺苷效应元件结合蛋白(CREB)及其磷酸化水平(p-CREB)的表达。结果从第4天开始,与模型组相比,电针组大鼠逃避潜伏期及游泳路程缩短(P<0.05);穿越平台次数增多(P<0.05)。电针组大鼠脑梗死体积小于模型组(P<0.05);海马CA1区CREB、p-CREB表达量较模型组增加(P<0.05)。结论电针神庭、百会后,脑缺血再灌注大鼠海马CA1区CREB、p-CREB表达量增加,从而保护神经元,改善学习记忆功能。%Objective To explore the effects of electroacupuncture at Shenting (DU24) and Baihui (DU20) on cognitive dysfunction af-ter stroke. Methods Forty-five Sprague-Dawley rats were randomly divided into control group (n=15), model group (n=15) and electroacu-puncture group (n=15). The latter two groups were occluded their middle cerebral artery for two hours and reperfused. The electroacupunc-ture group accepted electroacupuncture at Shenting and Baihui 24 hours after modeling for seven days. They were assessed with Morris wa-ter maze once a day since the second day of intervention. Their brains were stained with TTC staining to measure cerebral infarction volume after treatment, while the expression of cyclic AMP response element binding protein (CREB) and phosphorylation (p-CREB) in hippocam-pal CA1 area were detected with immunohistochemistry. Results The escape latency and swimming distance of place navigation shortened in the electroacupuncture group compared with those in the model group (P<0.05) from the fourth day of intervention. The number of cross platform of spatial probe increased (P<0.05). The infarction volume was less in the electroacupuncture group than in the model group (P<0.05), with increased expression of CREB and p-CREB in hippocampal CA1 area (P<0.05). Conclusion Electroacupuncture at Shenting and Baihui can increase the expression of CREB and phosphorylation in hippocampal CA1 area in rats after cerebral ischemia-reperfusion, to protect the neurons from ischemia and improve the learning and memory function.

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