AlN微晶棒的的制备及光致发光性能研究

摘要

采用直流电弧放电方法,在无催化剂的条件下直接氮化Al合成纤锌矿结构的AlN微晶棒。分别利用拉曼光谱仪( Raman)、扫描电子显微镜( SEM)和光致发光( PL)谱等测试手段对所制备样品进行表征和发光性能的研究。结果表明：所制备的AlN微晶棒长度约为30μm,直径约为10μm。在AlN微晶棒的PL谱中,有两个主要发光峰,中心在430 nm的发射源于VN 和(VAl-ON)2-构成的深施主-深受主对缺陷发光,中心在650 nm的发射源于VAl形成的深受主能级到价带的缺陷发光。在激发波长由270 nm逐渐增大到300 nm的过程中发现,AlN微晶棒波长在430 nm处的发光峰先增强后减弱,在激发波长为285 nm时强度最大；650 nm处的发光峰随激发波长增大而逐渐增强。%The wurtzite AlN microrods were synthesized by direct nitriding metal Al without catalyst using the direct current arc discharge method. The structure, morphology and luminescence property of the as-synthesized samples were characterized by Raman spectra, SEM and PL spectra. The length and diameter of AlN microrods are nearly 30 μm and 10 μm, respectively. There are two emission peaks in the PL spectrum of AlN microrods. The emission at 430 nm can be ascribed to DAP( donor-acceptor pair) radiation transition from deep donor level of VN to deep acceptor ( VAl-ON ) 2-. The emission at 650 nm can be ascribed to the radiation transition between deep VAl accep-tor and valence band. When the excitation wavelength changes from 270 nm to 300 nm, the intensi-ty of the emission peak at 430 nm is strengthened and then weakened, and when the excitation wave-length is 285 nm, the intensity is maximum. The intensity of the emission peak at 650 nm increases with the increasing of the excitation wavelength.