用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上.设计了由双δ掺杂构成的Hall器件的新结构,有效地提高了器件的面电子浓度.与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比,室温下器件电子迁移率从15000 cm2·V-1·s-1提高到16000 cm2·V-1·s-1.AFM测试表明材料有好的表面形态和结晶质量.从77 K到300 K对Hall器件进行霍尔测试,结果显示器件不同温度范围有不同散射机构.双δ掺杂结构形成高灵敏度、高二维电子气(2DEG)浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景.%The highly sensitive Hall device made of InAs/AlSb quantum-well structures pseudomorphically grown on the GaAs substrate by molecular beam epitaxy has been developed. The advanced InAs/AlSb Hall device includes double δ-doped layers, which significantly elevate the sheet electron density. Moreover, electron mobility is increased from 15000 cm2 ·V-1 ·s-1 to 16000 cm2 ·V-1 ·s-1 at room temperature, compared with that of an unintentional-ly doped AlSb/InAs Hall device. AFM measurement results show a smooth surface morphology and high crystalline quality of the samples. The quantum Hall device can be operated in the temperature ranging from 77 K to 300 K. Hall measurements show different scattering mechanism on electron mobility at temperature range. The advanced highly-sensitive InAs/AlSb heterostructure two-dimensional electron gases(2DEG) Hall device including double δ-doped layers is promising in near future.
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