反射式倒装对1300 nm激光器性能改善的分析

摘要

对AlGaInAs多量子阱1300 nm FP激光器进行反射式倒装封装,在热沉上靠近激光器出光端面约10~20 μm的区域采用Au反射层,对器件垂直方向出光进行反射.测试结果显示,与常规封装相比,采用这种结构封装芯片垂直发散角从34.5°降低至17°,器件单模光纤的平均耦合功率从1850 μW提高至2326 μW,耦合效率从21.1%提高到26.5%.对两种激光器进行光电参数的测量,结果表明:与常规封装器件相比,采用反射式倒装结构器件的饱和电流从135 mA提高至155 mA,饱和输出功率从37 mW提高至42 mW,热阻从194 K/W降低至131 K/W.最后对两种器件在95 ℃环境温度、100 mA电流下进行加速老化实验,老化结果显示:在老化条件下,器件衰退系数从常规封装的4.22×10 -5降低至1.06×10 -5,寿命从5283 h提高至21027 h.%AlGaInAs MQWs 1300 nm FP lasers were packaged p-side down with a reflective subm-ount which had 10-20 μm Au film near the facets of laser bare die. Compared to convention pack-age form laser(LD-B),the divergence angle at FWHM of flip chip(LD-A) with a Au reflector de-creases from 34.5° to 17°,and the average SMF coupling power increases from 1 850 μW to 2 326 μW,as the coupling efficiency increases from 21.1% to 26.5%. Compared to LD-B,the saturated current of LD-A increases from 135 mA to 155 mA, the saturated output power increasses from 37 mW to 42 mW,and the thermal resistance decreases from 194 K/W to 131 K/W. Finnaly,the ag-ing experiments are carried out under the condition of 95 ℃ ambient temperature and 100 mA injec-tion current. Compared to LD-B,the degradation coefficient of LD-A under aging condition decrea-ses from 4.22×10 -5to 1.06×10 -5,and the lifetime increases from 5283 h to 21027 h.