基于NAND Flash的海量存储器的设计

摘要

In order to comply with the requirements of the memory capacity and bandwidth in storage system,a high capacity memory is designed. This memory uses NAND Flash as the storage medium and a single board has 144 pieces of NAND Flash, dividing into three groups with each group having 48 chips. This can reduce the speed of monolithic memory and achieve a huge capacity of 576 Gbyte. It also employs FPGA to expand the read & write bandwidth by parallel operations on multiple pieces of Flash. Aiming at the shortcoming of bad block in NAND Flash, a management method is proposed to endure the reliability of the data.%针对存储系统中对存储容量和存储带宽的要求不断提高,设计了一款高性能的超大容量数据存储器.该存储器采用NAND Flash作为存储介质,单板载有144片芯片,分为3组,每组48片,降低了单片的存储速度,实现了576 Gbyte的海量存储.设计采用FPGA进行多片NAND Flash芯片并行读写来提高读写带宽,使得大容量高带宽的存储器得以实现.针对NAND Flash存在坏块的缺点,提出了相应的管理方法,保证了数据的可靠性.