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一种高温度性能的带隙基准源∗

         

摘要

基于OKI 0.5μm BiCMOS工艺,设计了一种低温漂的带隙基准电压源。对传统基准源的电压模式输出级进行了改进,使之形成同时包含电压模式和电流模式的混合模式输出级,提高了温度补偿的灵活性。同时设计了一种基于分段线性补偿技术的高精度曲率校正电路,精确地对基准电压的高阶温度分量进行修调。 HSPICE仿真结果表明,在5 V的电源电压下,基准输出电压为1.2156 V,在-40℃~125℃温度范围内,基准电压的温度系数为0.43×10-6/℃,低频时电路电源抑制比低于-83 dB。电源电压在3.8 V~10 V范围内变化时,基准源的线性调整率为9.2μV/V。%A bandgap voltage reference with low temperature-drift was proposed based on OKI 0. 5 μm BiCMOS process. The voltage-mode output stage of traditional reference was improved and a mixed-mode output stage which comprised both voltage and current modes was introduced. Thus the flexibility of temperature compensation was im-proved. Meanwhile a high-precision curvature correction circuit based on piecewise linear compensation technology was designed to trim the high-order temperature components of the reference voltage. Simulation using HSPICE soft-ware showed that,the output reference voltage was 1.2156 V under the 5 V power supply and its temperature coeffi-cient was 0.43×10-6/℃ at the range of -40 ℃~125 ℃. The power supply rejection ratio( PSRR) was lower than-83 dB at low frequency. Line regulation in the supply range of 3.8 V~10 V was 9.2 μV/V.

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