用蒙特卡罗法计算X射线在重金属界面的剂量增强系数

摘要

The dose would be enhanced on the low-Z material side when X-ray enters the interface constructed with two different materials.The mechanism of dose enhancement has been discussed and the Dose Enhancement Factors of W-Si,W-SiO2,Ta-Si and Ta-SiO2 interfaces are calculated by the Monte-Carlo method.%当X射线射入不同材料组成的界面时，在低Z材料的一侧将产生剂量增强.介绍了界面剂量增强效应的基本原理，并用蒙特-卡洛程序计算了钨-硅、钽-硅、钨-二氧化硅和钽-二氧化硅界面的剂量增强系数.