PbS红外探测器低频噪声物理模型及缺陷表征研究

摘要

In order to characterize the defects of PbS thin film photoconductive infrared detector materials,The physical model of 1/f noise and g-r noise are deduced and verified.The surface trap densities under different voltages are calculated by the relation between 1/f noise and surface trap in this model.The phenomenon that the surface trap density increases with bias voltage is observed.Therefore,the conclusion that 1/f noise is proportional to bias voltage is drawn,and it is consistent with the experimental measurements.In addition,the relation between g-r noise and deep-level defect characterization parameters is investigated based on this model,and the method of using low frequency noise to characterize defect parameters including defect activate energy,degeneracy factor and capture section is presented.%为了表征PbS薄膜光导红外探测器的材料缺陷,详细推导了1/f和产生-复合（g-r）噪声物理模型,并由实验数据验证了模型的准确性.利用1/f噪声与表面缺陷关系,计算了不同偏压下表面陷阱密度.得到该值随偏压升高而增加,由此得出1/f噪声与所加偏压成正比变化,与实验测试结果相一致.在此模型基础上,研究了g-r噪声与深能级缺陷特征参量的关系,提出由低频噪声表征缺陷激活能、简并因子、俘获截面等缺陷参数的方法.