ZnO：Sb薄膜的光致发光及拉曼特性研究

摘要

Sb-doped ZnO thin films with various impurity content values are deposited on glass substrates by radio frequency magnetron sputtering medthods. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation; The vibrational mode at 532 cm-1 induced by Sb dopant can be observed in the Raman spectrum of the Sb-doped ZnO thin film, which can be attributed to local vibrational mode (LVMsb.o) that are formed by substituting Sb for Zn substitution and bonding O in ZnO lattice. The strong violet emission peak located at 3.11 eV is observed only in Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak is relation to Sbzn-O complex defect in ZnO:Sb film.%利用射频磁控溅射法（MS．RF）在玻璃基片上制备了不同掺杂浓度的ZnO：Sb薄膜．借助X射线衍射仪（XRD）、透射光谱、光致发光谱（PL）和拉曼散射光谱（Raman）等手段研究了Sb掺杂浓度对ZnO薄膜的微结构、光致发光和拉曼特性的影响．结果表明：所有样品均呈现ZnO六角纤锌矿结构且具有高度C轴择优取向；在Sb掺杂ZnO薄膜的拉曼光谱中观察到位于532cm^-1的振动模式，结合XRD分析认为此峰归因于Sb替代Zn位且与0成键的局域振动模式（LVMSb--O）；光致发光谱测试发现，仅在ZnO：Sb薄膜中观察到位于3．11eV附近的紫光发射峰，结合拉曼光谱分析认为此峰与XbZn-O复合体缺陷相关．