铜铟镓硒太阳能电池多层膜的结构分析

摘要

In this paper, the complex structure of CulnGaSe (CIGS), which is fabricated by a two-step progress (the deposition step and the salinization) or co-evaporation method, is analyzed in detail by several methods. Rutherford backscattering spectroscopy (RBS) shows unique advantage for investigating CIGS multi-layer. For the two-step CIGS thin films, both Ga and In atoms reveal a gradient distribution. Such a distribution that Ga atoms are more likely to be localized in a deeper layer of surface than in a shallow layer of surface, has no relation with the Mo layer. RBS and Auger electron spectroscopy (AES) prove that there appears diffusion in the interfaces of multi-layers, especially the interfaces of CdS and CIGS, Mo and CIGS. X-ray fluorescence (XRF) indicates that CIGS thin film presents the highest efficiency when the content ratio of In and Ga atoms is 0.7:0.3. Structural investigation by X-ray diffraction reveals the improved crystalline quality after annealing.%对于溅射后硒化和共蒸发等方法制备的铜铟镓硒（CIGS）太阳能电池薄膜，利用多种分析方法研究了CIGS多层膜的复杂结构等．研究表明：卢瑟福背散射（RBS）在分析CIGS多层膜方面具有其独特优势和可靠的结果；溅射后硒化方法制备的CIGS薄膜中，Ga和In在CIGS薄膜中呈梯度分布，这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系；RBS和俄歇电子能谱分析（AES）均显示CIGS太阳能电池器件多层膜界面处存在扩散，尤其是CdS与CIGS，Mo与CIGS的界面处；X射线荧光（XRF）结果表明，电池效率最高的CIGS层中In，Ga比例为In：Ga=0．7：0.3；X射线衍射（XRD）结果显示：退火后的CIGS／Mo薄膜结晶品质得到了优化．