METHOD FOR PREPARING COPPER-INDIUM-GALLIUM-SELENIUM FILM FOR SOLAR CELL PHOTO-ABSORPTION LAYER BY MAGNETRON SPUTTERING PROCESS

摘要

Disclosed is a method for preparing copper-indium-gallium-selenium (CIGS) film for photo-absorption layer of solar cell, which comprises the steps of preparing a CIGS precursor film (200) by magnetron sputtering on a bottom electrode (101) using single target sputtering, or simultaneous or alternate sputtering of Cu-rich target and Cu-deficiency target, wherein the film has high reactive activity and can be reactively sintered quickly; and carrying out a heat treatment for the CIGS precursor film (200) to quickly react to produce a CIGS film for photo-absorption layer of solar cell which is even, compact, uniform and good at photoelectric property.