基于Si/SiO2材料对制备出名义节距为50 nm的多层膜光栅,重点分析了多层膜光栅研磨抛光过程中的亚表面损伤和湿法刻蚀均匀性问题.并利用原子力显微镜(AFM)和透射电子显微镜(TEM)对多层膜的截面粗糙度和刻蚀光栅结果进行了测量和分析.测量结果显示:多层膜光栅制备过程中的截面粗糙度降低和刻蚀均匀性的提高,有助于TEM测量获得均一的高成像对比度多层膜光栅图像.%Based on the Si/SiO2 material,a multilayer film grating with nominal pitch of 50 nm is prepared.The problem of sub-surface damage during the grinding and polishing process and wet etching uniformity is analyzed emphatically.The cross-sectional roughness and the results of the etching grating are measured and analyzed by atomic force microscopy (AFM) and transmission electron microscopy (TEM).The results show that the decrease of the cross-sectional roughness and the uniformity of the etching in the preparation of the multilayer film grating helps to obtain a uniform high-contrast contrast multi-layer raster image for TEM measurement.
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