工频磁场急性暴露对PC12细胞生长和凋亡的影响

摘要

将体外传代培养的PC12细胞,经50Hz、100 μT的工频磁场暴露24 h.采用噻唑蓝比色法检测细胞增殖活力,流式细胞术检测细胞周期,吖啶橙/溴化乙锭免疫荧光双染色法检测细胞凋亡.结果表明:1)细胞增殖活力于磁场暴露终止后0h明显下降(P＜0.01); 4h未见著变；8 h (P＜0.05)和12 h(P＜0.01)显著升高.2)磁场暴露终止后0h,G0/G1期细胞百分比显著增高(P＜0.01),S期细胞百分比显著下降(P＜0.05)；6 h的G2/M期细胞百分比显著增高(P＜0.05)；12 h的G0/G1期细胞百分比明显下降(P＜0.01),S期细胞百分比显著升高(P＜0.05)；24 h未见著变.3)磁场暴露期间,6h细胞凋亡率未见显著改变,12、18和24 h凋亡明显增加,至暴露终止后4、8、12和24 h均显著升高,未见恢复.以上结果说明50Hz、100 μT的工频磁场急性暴露,可导致PC12细胞周期和增殖活力的改变,以及细胞凋亡增多.%PC12 cells were cultured in vitro, then exposed to 50 Hz and 100 |xT extremely low frequency electromagnetic fields for 24 h. The proliferation activity, cell cycle and apoptosis was detected respectively by methyl thiazolyl tetrazolium colorimetry, flow cytometry and acridine orange/ethidium bromide, double label immunofluorescence. It was found that: 1) After exposure, proliferation activity was decreased at 0 h (P< 0.01), but increased at 8 h (P<0.05) and 12 h (P<0.01), and there were no significant changes at 4 h. 2) After exposure, G0/G1 cells were increased (P<0.01) and S cells were decreased (P<0.05) at 0h, G2/M cells were increased (P<0.05) at 6 h, G0/G1 cells were decreased(P<0.01) and S cells were increased (P< 0.05) at 12 h, there were no significant changes at 24 h. 3) The apoptotic rates were increased significantly at 12 h (P<0.05), 18 h (P<0.01) and 24 h (P<0.01) during exposure, and 6 h, 12 h, 18 h and 24 h after exposure (P<0.01). The results indicated that 50 Hz and 100 μT extremely low frequency electromagnetic fields exposure for 24 h can change the proliferation activity and cell cycle of PC12 cells and increase cell apoptosis.