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首页> 中文期刊> 《中国高等学校学术文摘·光电子学》 >Charge trapping memory devices employing multi-layered Ge/Si nanocrystals for storage fabricated with ALD and PLD methods

Charge trapping memory devices employing multi-layered Ge/Si nanocrystals for storage fabricated with ALD and PLD methods

         
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  • 来源
    《中国高等学校学术文摘·光电子学》 |2011年第2期|146-149|共4页
  • 作者

    Guangli WANG; Yi SHI; Lijia PAN; Lin PU; Jin LV; Rong ZHANG; Youdou ZHENG;

  • 作者单位

    School of Electronic Science and Technology, Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;

    School of Electronic Science and Technology, Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;

    School of Electronic Science and Technology, Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;

    School of Electronic Science and Technology, Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;

    School of Electronic Science and Technology, Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;

    School of Electronic Science and Technology, Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;

    School of Electronic Science and Technology, Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;

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