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Characterization of the ferroelectric transistor and its applications in analog circuits.

机译:铁电晶体管的特性及其在模拟电路中的应用。

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摘要

The basic properties of the ferroelectric field-effect transistor (FeFET) and this transistor's use in the common-drain amplifier circuit configuration are examined. The FeFET's properties of spontaneous polarization, hysteresis, and drain current decay are detailed. Drain current equations are developed based on the Fermi-Dirac equation and are used to model the FeFET's I-V characteristics. Plots of the FeFET's measured and modeled I-V characteristics are compared. Then, the FeFET-based common-drain amplifier circuit is built. The effect of frequency and load resistance on each of the output peak voltage, phase shift, and voltage gain are developed based on empirical data. It has been determined that each of these three output parameters is logarithmically related to frequency and load resistance. A model is then developed in Microsoft Excel to describe the characteristics of the FeFET common-drain amplifier. It is the first mathematical-based model to depict the behavior of a FeFET-based amplifier.
机译:研究了铁电场效应晶体管(FeFET)的基本特性以及该晶体管在共漏极放大器电路配置中的使用。 FeFET的自发极化,迟滞和漏极电流衰减特性均已详述。漏电流方程式是基于Fermi-Dirac方程式开发的,用于模拟FeFET的I-V特性。比较了FeFET的测量和建模的I-V特性曲线。然后,建立了基于FeFET的共漏极放大器电路。频率和负载电阻对输出峰值电压,相移和电压增益的影响均基于经验数据得出。已经确定这三个输出参数中的每一个与频率和负载电阻在对数上相关。然后在Microsoft Excel中开发一个模型来描述FeFET共漏极放大器的特性。它是第一个基于数学的模型,用于描述基于FeFET的放大器的性能。

著录项

  • 作者

    Sayyah, Rana.;

  • 作者单位

    The University of Alabama in Huntsville.;

  • 授予单位 The University of Alabama in Huntsville.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.S.E.
  • 年度 2009
  • 页码 78 p.
  • 总页数 78
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TS97-4;
  • 关键词

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