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Magneto-transport study of quantum phases in wide GaAs quantum wells.

机译:宽砷化镓量子阱中量子相的磁输运研究。

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摘要

In this thesis we study several quantum phases in very high quality two-dimensional electron systems (2DESs) confined to GaAs single wide quantum wells (QWs). In these systems typically two electric subbands are occupied. By controlling the electron density as well as the QW symmetry, we can fine tune the cyclotron and subband separation energies, so that Landau levels (LLs) belonging to different subbands cross at the Fermi energy EF. The additional subband degree of freedom enables us to study different quantum phases.;Magneto-transport measurements at fixed electron density n and various QW symmetries reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall (FQH) states at LL filling factors nu = 10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. These q/3 states are stable and strong as long as EF lies in a ground-state (N = 0) LL, regardless of whether that level belongs to the symmetric or the anti-symmetric subband.;We also observe subtle and distinct evolutions near filling factors nu = 5/2 and 7/2, as we change the density n, or the symmetry of the charge distribution. The even-denominator FQH states are observed at nu = 5/2, 7/2, 9/2 and 11/2 when EF lies in the N= 1 LLs of the symmetric subband (the S1 levels). As we increase n, the nu = 5/2 FQH state suddenly disappears and turns into a compressible state once EF moves to the spin-up, N = 0, anti-symmetric LL (the A0 ↑ level). The sharpness of this disappearance suggests a first-order transition from a FQH to a compressible state. Moreover, thanks to the renormalization of the susbband energy separation in a well with asymmetric change distribution, two LLs can get pinned to each other when they are crossing at E F. We observe a remarkable consequence of such pinning:;There is a developing FQH state when the LL filling factor of the symmetric subband nuS equals 5/2 while the antisymmetric subband has filling 1 < nuA <2.;Next, we study the evolution of the nu=5/2 and 7/2 FQH states as we add a parallel magnetic field, B||, in the plane of the sample. The first-order transitions at nu = 5/2 and 7/2 are softened when B|| is applied, thanks to the mixing of the LLs from different subbands. Meanwhile, a small B|| also introduces a severe transport anisotropy at nu = 5/2 while the FQH state still remains reasonably strong.;Several other novel phenomena are also observed in wide QWs. In high (N ≥ 2) LLs, our study reveals an unexpected rotation of the orientation of the stripe phase observed at a half-filled LL. This rotation is sensitive to the spin of the LL and the symmetry of the charge distribution in the QW. In the lowest LL, we observe a close competition between electron liquid and solid phases near filling factor nu = 1. In perticular, we observe a reentrant nu = 1 integer quantum Hall effect which signals the formation of a Wigner crystal state.
机译:在本文中,我们研究了仅限于GaAs单宽量子阱(QW)的高质量二维电子系统(2DES)中的几个量子相。在这些系统中,通常会占用两个子频带。通过控制电子密度以及QW对称性,我们可以微调回旋加速器和子带的分离能,从而使属于不同子带的Landau能级(LLs)在费米能量EF处交叉。额外的子带自由度使我们能够研究不同的量子相位。在固定电子密度n和各种QW对称性下的磁传输测量揭示了在LL填充因子nu下分数量子霍尔(FQH)状态出现和消失的显着模式。 = 10 / 3、11 / 3、13 / 3、14 / 3、16 / 3和17/3。只要EF处于基态(N = 0)LL,这些q / 3状态都是稳定且强壮的,无论该电平属于对称还是反对称子带。;我们还观察到了细微而独特的演变当我们改变密度n或电荷分布的对称性时,接近填充因子nu = 5/2和7/2。当EF位于对称子带的N = 1个LL(S1电平)时,在nu = 5 / 2、7 / 2、9 / 2和11/2处观察到偶数分母FQH状态。随着我们增加n,一旦EF向上旋转,N = 0,反对称LL(A0↑电平),nu = 5/2 FQH状态突然消失并变成可压缩状态。这种消失的尖锐性暗示了从FQH到可压缩状态的一阶过渡。此外,由于具有不对称变化分布的井中的能带能量分离重新归一化,两个LL在E F处相交时可以彼此固定。我们观察到这种固定的显着结果:当对称子带nuS的LL填充因子等于5/2而反对称子带LL填充因子1

著录项

  • 作者

    Liu, Yang.;

  • 作者单位

    Princeton University.;

  • 授予单位 Princeton University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 148 p.
  • 总页数 148
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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