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Evaluation of local anisotropic elasticity and thermal expansion on whisker formation sites in beta-tin thin films.

机译:评估β-锡薄膜晶须形成部位的局部各向异性弹性和热膨胀。

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摘要

Tin whiskers are long filament-like crystals, growing from Sn-alloy thin films under conditions of various stress-generating mechanisms. The growth of whiskers has been observed in Pb-free electronic devices, posing a reliability risk by creating short circuits between adjacent components. Understanding the whisker formation mechanisms is necessary to develop mitigation strategies to reduce whisker risks. Although this phenomenon has been commonly identified as a local stress relaxation mechanism via mass transport, now a fundamental question is on the local effects: what local properties determine which grains will form whiskers?;Since beta-Sn has a body-centered-tetragonal crystal structure with highly anisotropic elasticity and thermal expansion, 2-D stress calculations using finite element analysis were performed to investigate the effects of film textures and local grain orientations on global and local film properties, associated with the preferred whisker formation sites, as well as the film's propensity to form whiskers. These results also suggest that thin film stress relaxation can be controlled by engineering specific textures, which will be different for stress generation by mechanical load or temperature change.;On the other hand, thermally-cycled large-grained Sn solder films were used to identify the effects of beta-Sn anisotropy and grain geometry on local stress relaxation, such as surface defect formation and grain boundary (GB) sliding. While a global stress was induced due to the coefficient of thermal expansion (CTE) mismatch between Sn films and Cu substrates, various degrees of local stresses were induced at GBs due to the grain orientations and anisotropic CTE. Our results indicate that surface defect formation and GB sliding were observed at specific GBs, which have relatively high in-plane CTE normal to GBs for inducing local high stresses during thermal cycling. In addition, evolutions of local grain orientation, relative dislocation density, and elastic strain energy density before and after stress relaxation at GBs were determined using x-ray synchrotron micro-diffraction, while specific grain geometry for initiating surface defect formation or GB sliding was identified using FIB analysis.;In the end of this study, 3-D stress calculations considering beta-Sn anisotropy were performed to simulate local stress distributions around surface grains, since whisker formation sites have been commonly associated with surface grains in columnar-grained microstructures. The results indicate that a local stress gradient can be created due to local grain orientations, enhancing atomic diffusion toward the whisker base to accelerate whisker growth. Based on the studies in this dissertation, deep insight into the critical conditions for determining whisker formation sites is obtained in terms of film microstructures and beta-Sn anisotropy.
机译:锡晶须是长丝状晶体,是在各种应力​​产生机理的条件下从锡合金薄膜中生长出来的。在无铅电子设备中观察到晶须的生长,通过在相邻组件之间造成短路,存在可靠性风险。了解晶须形成机制对于制定缓解策略以减少晶须风险是必不可少的。尽管这种现象通常被认为是通过传质引起的局部应力松弛机制,但现在的一个基本问题是局部效应:哪些局部性质决定了哪些晶粒将形成晶须?;由于β-Sn具有体心四方晶体在具有高度各向异性的弹性和热膨胀的结构中,使用有限元分析进行了二维应力计算,以研究薄膜纹理和局部晶粒取向对整体和局部薄膜性能的影响,以及优选的晶须形成部位以及电影形成晶须的倾向。这些结果还表明,可以通过工程特定的纹理来控制薄膜应力松弛,这对于因机械负载或温度变化而产生的应力而言是不同的;另一方面,使用热循环的大颗粒Sn焊料膜来识别β-Sn各向异性和晶粒几何形状对局部应力松弛(如表面缺陷形成和晶界(GB)滑动)的影响。尽管由于Sn膜和Cu基底之间的热膨胀系数(CTE)不匹配而引起了整体应力,但由于晶粒取向和各向异性CTE,在GBs处引起了不同程度的局部应力。我们的结果表明,在特定的GB处观察到了表面缺陷的形成和GB的滑动,这些GB具有相对于GBs较高的面内CTE,以在热循环过程中引起局部高应力。此外,使用X射线同步加速器微衍射确定了GBs应力松弛前后局部晶粒取向,相对位错密度和弹性应变能密度的变化,同时确定了用于引发表面缺陷形成或GB滑动的特定晶粒几何形状在本研究的最后,由于晶须的形成部位通常与柱状晶粒组织中的表面晶粒相关,因此在考虑了β-Sn各向异性的情况下进行了3-D应力计算,以模拟表面晶粒周围的局部应力分布。结果表明,由于局部晶粒取向可产生局部应力梯度,从而增强了向晶须基体的原子扩散,从而加速了晶须的生长。根据本文的研究,从薄膜的微观结构和β-Sn各向异性的角度,深入了解了确定晶须形成部位的关键条件。

著录项

  • 作者

    Chen, Wei-Hsun.;

  • 作者单位

    Purdue University.;

  • 授予单位 Purdue University.;
  • 学科 Materials science.;Condensed matter physics.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 158 p.
  • 总页数 158
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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