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Design Techniques for Power-Aware Combinational Logic SER Mitigation.

机译:具有功耗意识的组合逻辑SER缓解的设计技术。

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摘要

The history of modern semiconductor devices and circuits suggests that technologists have been able to maintain scaling at the rate predicted by Moore's Law [Moor-65]. With improved performance, speed and lower area, technology scaling has also exacerbated reliability issues such as soft errors. Soft errors are transient errors that occur in microelectronic circuits due to ionizing radiation particle strikes on reverse biased semiconductor junctions. These radiation induced errors at the terrestrial-level are caused due to radiation particle strikes by (1) alpha particles emitted as decay products of packing material (2) cosmic rays that produce energetic protons and neutrons, and (3) thermal neutrons [Dodd-03], [Srou-88] and more recently muons and electrons [Ma-79] [Nara-08] [Siew-10] [King-10]. In the space environment radiation induced errors are a much bigger threat and are mainly caused by cosmic heavy-ions, protons etc. The effects of radiation exposure on circuits and measures to protect against them have been studied extensively for the past 40 years, especially for parts operating in space. Radiation particle strikes can affect memory as well as combinational logic. Typically when these particles strike semiconductor junctions of transistors that are part of feedback structures such as SRAM memory cells or flip-flops, it can lead to an inversion of the cell content. Such a failure is formally called a bit-flip or single-event upset (SEU). When such particles strike sensitive junctions part of combinational logic gates they produce transient voltage spikes or glitches called single-event transients (SETs) that could be latched by receiving flip-flops. As the circuits are clocked faster, there are more number of clocking edges which increases the likelihood of latching these transients. In older technology generations the probability of errors in flip-flops due to SETs being latched was much lower compared to direct strikes on flip-flops or SRAMs leading to SEUs. This was mainly because the operating frequencies were much lower for older technology generations. The Intel Pentium II for example was fabricated using 0.35 microm technology and operated between 200-330 MHz. With technology scaling however, operating frequencies have increased tremendously and the contribution of soft errors due to latched SETs from combinational logic could account for a significant proportion of the chip-level soft error rate [Sief-12][Maha-11][Shiv02] [Bu97]. Therefore there is a need to systematically characterize the problem of combinational logic single-event effects (SEE) and understand the various factors that affect the combinational logic single-event error rate.;Just as scaling has led to soft errors emerging as a reliability-limiting failure mode for modern digital ICs, the problem of increasing power consumption has arguably been a bigger bane of scaling. While Moore's Law loftily states the blessing of technology scaling to be smaller and faster transistor it fails to highlight that the power density increases exponentially with every technology generation. The power density problem was partially solved in the 1970's and 1980's by moving from bipolar and GaAs technologies to full-scale silicon CMOS technologies. Following this however, technology miniaturization that enabled high-speed, multicore and parallel computing has steadily increased the power density and the power consumption problem. Today minimizing the power consumption is as much critical for power hungry server farms as it for portable devices, all pervasive sensor networks and future eco-bio-sensors. Low-power consumption is now regularly part of design philosophies for various digital products with diverse applications from computing to communication to healthcare.;Thus designers in today's world are left grappling with both a "power wall" as well as a "reliability wall". Unfortunately, when it comes to improving reliability through soft error mitigation, most approaches are invariably straddled with overheads in terms of area or speed and more importantly power. Thus, the cost of protecting combinational logic through the use of power hungry mitigation approaches can disrupt the power budget significantly. Therefore there is a strong need to develop techniques that can provide both power minimization as well as combinational logic soft error mitigation. This dissertation, advances hitherto untapped opportunities to jointly reduce power consumption and deliver soft error resilient designs. Circuit as well as architectural approaches are employed to achieve this objective and the advantages of cross-layer optimization for power and soft error reliability are emphasized.
机译:现代半导体器件和电路的历史表明,技术人员已经能够以摩尔定律[Moor-65]所预测的速率保持缩放。随着性能,速度和面积的减小,技术扩展也加剧了诸如软错误之类的可靠性问题。软错误是由于反向偏置的半导体结上的电离辐射粒子撞击而在微电子电路中发生的瞬态错误。这些由地面引起的辐射引起的误差是由于以下因素引起的:(1)作为填充材料的衰变产物发射的α粒子(2)产生高能质子和中子的宇宙射线,以及(3)热中子[Dodd- 03],[Srou-88],以及最近的介子和电子[Ma-79] [Nara-08] [Siew-10] [King-10]。在空间环境中,辐射引起的错误是一个更大的威胁,主要是由宇宙重离子,质子等引起的。在过去的40年中,尤其是对于辐射暴露对电路的影响及其防护措施进行了广泛的研究。在太空中运作的零件。辐射粒子撞击会影响内存以及组合逻辑。通常,当这些粒子撞击作为反馈结构(例如SRAM存储单元或触发器)一部分的晶体管的半导体结时,会导致单元内容的反转。这种故障在形式上被称为位翻转或单事件失败(SEU)。当此类粒子撞击组合逻辑门的敏感结时,它们会产生称为单事件瞬变(SET)的瞬态电压尖峰或毛刺,可通过接收触发器将其锁存。随着电路时钟速度的加快,时钟边沿的数量增加了,这增加了锁存这些瞬变的可能性。与触发SEU的触发器或SRAM的直接撞击相比,在较早的技术时代中,由于SET被锁存而导致触发器出错的可能性要低得多。这主要是因为老一代技术的工作频率要低得多。例如,英特尔奔腾II是使用0.35微米技术制造的,工作频率在200-330 MHz之间。但是,随着技术的扩展,工作频率已经大大增加,并且由于组合逻辑锁存的SET而导致的软错误的贡献可能占芯片级软错误率的很大比例[Sief-12] [Maha-11] [Shiv02] [Bu97]。因此,有必要系统地描述组合逻辑单事件效应(SEE)的问题,并了解影响组合逻辑单事件错误率的各种因素。由于限制了现代数字IC的故障模式,因此增加功耗的问题可以说是规模扩大的祸根。尽管摩尔定律高高地提出了使技术规模缩小,晶体管速度更快的祝福,但它并未强调功率密度随每一代技术的增长呈指数增长。功率密度问题在1970年代和1980年代通过从双极和GaAs技术转移到全面的硅CMOS技术而得到部分解决。但是,随之而来的是实现高速,多核和并行计算的技术小型化,稳定地增加了功率密度和功耗问题。如今,对于耗电的服务器场而言,将功耗降至最低对于便携式设备,所有普及型传感器网络以及未来的生态生物传感器而言至关重要。现在,低功耗已成为各种数字产品设计理念的一部分,从计算到通信再到医疗保健,这些数字产品具有多种应用。因此,当今世界的设计师都在为“功率墙”和“可靠性墙”而苦苦挣扎。不幸的是,当要通过软错误缓解来提高可靠性时,大多数方法总是会在面积或速度以及更重要的是功率方面产生开销。因此,通过使用耗电缓解方法来保护组合逻辑的成本可能会严重破坏电源预算。因此,迫切需要开发能够提供功率最小化以及组合逻辑软错误缓解的技术。本论文为迄今尚未开发的机会提供了机会,以共同降低功耗并提供具有软错误复原能力的设计。电路和架构方法均被用来实现该目标,并强调了针对功率和软错误可靠性进行跨层优化的优势。

著录项

  • 作者

    Mahatme, Nihaar N.;

  • 作者单位

    Vanderbilt University.;

  • 授予单位 Vanderbilt University.;
  • 学科 Electrical engineering.;Nanotechnology.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 282 p.
  • 总页数 282
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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