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Inorganic and Organic Photovoltaic Materials for Powering Electrochromic Systems

机译:用于电致变色系统的无机和有机光伏材料

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摘要

Autonomous smart windows may be integrated with a stack of active components, such as electrochromic devices, to modulate the opacity/transparency by an applied voltage. Here, we describe the processing and performance of two classes of visibly-transparent photovoltaic materials, namely inorganic (ZnO thin film) and fully organic (PCDTBT:PC70BM), for integration with electrochromic stacks.;Sputtered ZnO (2% Mn) films on ITO, with transparency in the visible range, were used to fabricate metal-semiconductor (MS), metal-insulator-semiconductor (MIS), and p-i-n heterojunction devices, and their photovoltaic conversion under ultraviolet (UV) illumination was evaluated with and without oxygen plasma-treated surface electrodes (Au, Ag, Al, and Ti/Ag). The MS Schottky parameters were fitted against the generalized Bardeen model to obtain the density of interface states (Dit ≈ 8.0x1011 eV--1cm--2) and neutral level (E o ≈ -5.2 eV). These devices exhibited photoconductive behavior at lambda = 365 nm, and low-noise Ag-ZnO detectors exhibited responsivity (R) and photoconductive gain (G) of 1.93x10--4 A/W and 6.57x10--4, respectively. Confirmed via matched-pair analysis, post-metallization, oxygen plasma treatment of Ag and Ti/Ag electrodes resulted in increased Schottky barrier heights, which maximized with a 2 nm SiO2 electron blocking layer (EBL), coupled with the suppression of recombination at the metal/semiconductor interface and blocking of majority carriers. For interdigitated devices under monochromatic UV-C illumination, the open-circuit voltage (Voc) was 1.2 V and short circuit current density (Jsc), due to minority carrier tunneling, was 0.68 mA/cm2.;A fully organic bulk heterojunction photovoltaic device, composed of poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyli2',1',3'-benzothiadiazole)]:phenyl-C71-butyric-acidmethyl (PCDTBT:PC70BM), with corresponding electron and hole transport layers, i.e., LiF with Al contact and conducting/non-conducting (nc) PEDOT:PSS (with ITO/PET or Ag nanowire/PDMS contacts; the illuminating side), respectively, was developed. The PCDTBT/PC70BM/PEDOT:PSS(nc)/ITO/PET stack exhibited the highest performance: power conversion efficiency (PCE) ≈ 3%, Voc = 0.9V, and Jsc ≈ 10-15 mA/cm2. These stacks exhibited high visible range transparency, and provided the requisite power for a switchable electrochromic stack having an inkjet-printed, optically-active layer of tungsten trioxide (WO3), peroxo-tungstic acid dihydrate, and titania (TiO2) nano-particle-based blend. The electrochromic stacks (i.e., PET/ITO/LiClO4/WO 3 on ITO/PET and Ag nanowire/PDMS substrates) exhibited optical switching under external bias from the PV stack (or an electrical outlet), with 7 s coloration time, 8 s bleaching time, and 0.36-0.75 optical modulation at lambda = 525 nm. The devices were paired using an Internet of Things controller that enabled wireless switching.
机译:自主智能窗口可以与一堆有源组件(例如电致变色设备)集成在一起,以通过施加的电压来调节不透明度/透明度。在这里,我们描述了两类可见透明的光伏材料的处理和性能,即无机(ZnO薄膜)和完全有机(PCDTBT:PC70BM),用于与电致变色叠层集成;在其上溅射ZnO(2%Mn)膜ITO在可见光范围内具有透明性,用于制造金属半导体(MS),金属绝缘体半导体(MIS)和引脚异质结器件,并在有氧和无氧条件下评估了其在紫外线(UV)照射下的光电转换等离子体处理过的表面电极(Au,Ag,Al和Ti / Ag)。将MS肖特基参数与广义的Bardeen模型拟合,以获得界面态的密度(Dit≈ 8.0x1011 eV--1cm--2)和中性能级(E o≈ -5.2 eV)。这些设备在λ= 365 nm处表现出光电导性能,而低噪声Ag-ZnO检测器的响应度(R)和光电导增益(G)分别为1.93x10--4 A / W和6.57x10--4。通过匹配对分析确认,对Ag和Ti / Ag电极进行后金属化,氧等离子体处理会导致肖特基势垒高度增加,这在2 nm SiO2电子阻挡层(EBL)的作用下达到最大,同时抑制了复合结构的重整。金属/半导体界面和多数载流子的阻挡。对于在单色UV-C照明下的叉指式器件,由于少数载流子隧穿,开路电压(Voc)为1.2 V,短路电流密度(Jsc)为0.68 mA / cm2。由聚[N-9'-十七烷基-2,7-咔唑-alt-5,5-(4',7'-di-2-thienyli2',1',3'-苯并噻二唑)]组成:苯基- C71丁酸甲基(PCDTBT:PC70BM),具有相应的电子和空穴传输层,即具有Al接触和导电/非导电(nc)PEDOT:PSS的LiF(具有ITO / PET或Ag纳米线/ PDMS接触;分别开发)。 PCDTBT / PC70BM / PEDOT:PSS(nc)/ ITO / PET堆栈表现出最高的性能:功率转换效率(PCE)≈ 3%,Voc = 0.9V和Jsc≈ 10-15 mA / cm2。这些堆叠显示出高可见光范围的透明度,并为具有喷墨打印的三氧化钨(WO3),过氧钨酸二水合钨和二氧化钛(TiO2)纳米粒子的光学活性层的可切换电致变色堆叠提供了必要的功率。基础的混合。电致变色叠层(即ITO / PET和Ag纳米线/ PDMS基板上的PET / ITO / LiClO4 / WO 3)在来自PV叠层(或电源插座)的外部偏压下呈现出光学切换,着色时间为7 s,时间为8 s漂白时间,λ= 525 nm时的光学调制为0.36-0.75。使用启用无线交换的物联网控制器将设备配对。

著录项

  • 作者

    Ali Azhar, Ebraheem.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Electrical engineering.;Nanoscience.;Energy.
  • 学位 Ph.D.
  • 年度 2018
  • 页码 162 p.
  • 总页数 162
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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