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Frequency Constraints on D.C. Biasing in Deep Submicron Technologies.

机译:深亚微米技术中直流偏置的频率约束。

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摘要

The progression of technology has required smaller devices to achieve faster circuits and more power-efficient systems. However, with supply voltage and device intrinsic gain decreasing, device biasing in deep sub-micron technologies can be challenging. A low-voltage current source is analyzed in a 28 nm CMOS, 0.85 V supply, technology to take into account undesirable effects introduced by aggressively scaled technologies. The analysis includes intrinsic gain degradation as well as short-channel effects to create a more accurate design methodology. Amplifier design challenges in deep sub-micron technologies are discussed along with a DAC bias correction technique. Frequency dependence of output resistance for a simple and a proposed current source is presented. For the proposed current source the frequency dependence of output resistance was found to be dictated by the frequency response of the amplifier. To demonstrate the relevance of current source resistance bandwidth a common-mode logic circuit is considered, and fabrication plans are discussed along with future work.
机译:技术的进步要求更小的设备来实现更快的电路和更节能的系统。但是,随着电源电压和器件固有增益的降低,深亚微米技术中的器件偏置可能会面临挑战。在28 nm CMOS,0.85 V电源中对低压电流源进行了分析,以考虑到大规模扩展技术所带来的不良影响。该分析包括固有增益衰减以及短通道效应,以创建更准确的设计方法。讨论了深亚微米技术中的放大器设计挑战以及DAC偏置校正技术。提出了一种简单且建议的电流源的输出电阻的频率依赖性。对于所提出的电流源,发现输出电阻的频率依赖性取决于放大器的频率响应。为了证明电流源电阻带宽的相关性,考虑了一种共模逻辑电路,并讨论了制造计划以及未来的工作。

著录项

  • 作者单位

    Rochester Institute of Technology.;

  • 授予单位 Rochester Institute of Technology.;
  • 学科 Electrical engineering.
  • 学位 M.S.
  • 年度 2015
  • 页码 83 p.
  • 总页数 83
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 公共建筑;
  • 关键词

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