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High Efficiency Edge Coupler, Novel Nonlinear Optical Polymers with Large Kerr-Coefficient and Automatic Layout Generation in Silicon Photonics

机译:高效边缘耦合器,具有大Kerr​​系数的新型非线性光学聚合物和硅光子学中的自动布局生成

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摘要

The potential of on-chip photonics is limited by the difficulty in coupling light from optical fibers to on-chip waveguides. Specifically, 3rd-order nonlinear on-chip photonics usually requires high optical power. Hence the first major focus of this research is to design high-efficiency edge couplers. To achieve this goal, loss mechanisms of basic inverse taper couplers are analyzed and experimentally verified. Then a cantilever-encapsulated inverse taper is demonstrated to further lower coupling loss compared to basic inverse tapers. Nonetheless, both couplers are designed to couple with lensed fibers. Hence for flat fibers with larger mode-field-diameter (MFD), a novel sub-wavelength grating based edge coupler is proposed and experimentally demonstrated to have 1.9dB/facet loss. Eventually a silicon multi-section taper with intermediate SU-8 waveguide cladding is proposed for flat fibers with even larger MFD and experimentally verified. Based on the result several suggestions are proposed for further improvement.;Since high optical power is necessary for 3rd-order nonlinear applications, silicon is not the material choice due to its intrinsic two-photon-absorption(TPA). Thus the second focus of this research is to explore a novel nonlinear optical polymer termed PolyDDMEBT. Both its linear and nonlinear optical properties are characterized. The measurement shows that the material has a real part refractive index of 1.68 and negligible absorption in 1550nm. Also, the polymer possesses negative thermo-optical coefficient. In addition, Z-scan measurement shows large Kerr-coefficient and no presence of TPA in this polymer. As a result, PolyDDMEBT may be useful for 3rd-order optical nonlinear applications.;The third focus of this research is regarding automatic layout generation of on-chip photonics. This tool developed by the author is proven capable of generating both simple and complex on-chip photonic layouts. And it is especially efficient in large numbers of parameter sweepings.
机译:芯片上光子学的潜力受到将来自光纤的光耦合到芯片上波导的困难的限制。具体而言,三阶非线性片上光子学通常需要高光功率。因此,这项研究的首要重点是设计高效的边缘耦合器。为了达到这个目的,对基本的反向锥形耦合器的损耗机理进行了分析和实验验证。然后证明了悬臂封装的反向锥度与基本反向锥度相比可进一步降低耦合损耗。尽管如此,两个耦合器都设计为与透镜光纤耦合。因此,对于具有更大模场直径(MFD)的扁平光纤,提出了一种基于亚波长光栅的新型边缘耦合器,并通过实验证明其具有1.9dB /小平面损耗。最终,提出了具有中间SU-8波导包层的硅多段锥度,用于具有更大MFD的扁平光纤,并进行了实验验证。基于此结果,提出了进一步改进的一些建议。由于三阶非线性应用需要高光功率,因此硅由于其固有的双光子吸收(TPA)而不是材料的选择。因此,本研究的第二个重点是探索一种称为PolyDDMEBT的新型非线性光学聚合物。表征其线性和非线性光学性质。测量表明该材料的实部折射率为1.68,在1550nm处的吸收可以忽略不计。而且,该聚合物具有负的热光学系数。另外,Z扫描测量显示出大的克尔系数,并且在该聚合物中不存在TPA。因此,PolyDDMEBT可能对三阶光学非线性应用很有用。该研究的第三个重点是关于片上光子的自动布局生成。作者开发的该工具被证明能够生成简单和复杂的片上光子布局。并且在大量参数扫描中特别有效。

著录项

  • 作者

    Niu, Ben.;

  • 作者单位

    Purdue University.;

  • 授予单位 Purdue University.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2016
  • 页码 104 p.
  • 总页数 104
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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