We have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of intrinsic Ge(100) and undoped and doped Si(100) into their respective self-implanted amorphous phases. Samples are annealed in a high-temperature, high-pressure diamond anvil cell. Fluid argon is used as the pressure transmission medium which ensures a clean and perfectly hydrostatic environment around the sample, and the external heating geometry employed in the cell provides a uniform temperature across the sample. The SPE growth rates are determined by in situ time-resolved visible (for Si) or infrared (for Ge) interferometry. We found that pressure enhances the growth process in both Si and Ge. For Ge, an activation volume of -6.3
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