首页> 外文学位 >Design, fabrication and characterization of a novel multiquantum well injection mode device (MQW-IMD) generating a neuron-like, pulse-train output.
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Design, fabrication and characterization of a novel multiquantum well injection mode device (MQW-IMD) generating a neuron-like, pulse-train output.

机译:新型多量子阱注入模式设备(MQW-IMD)的设计,制造和表征,可产生类似神经元的脉冲序列输出。

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摘要

This work concerns the design, fabrication and characterization of a novel semiconductor device named the Multi-Quantum Well Injection Mode Device (MQW-IMD). The MQW-IMD produces a neuron-like pulse-train output in a simple circuit consisting of a load resistor and capacitor with the characteristics of the pulses similar to those of biological neuron. The MQW-IMD is proposed as an electronic analog to the biological neuron and can be used as a processing element for the implementation of artificial neural networks.;The device consists of n;The performance of the devices was compared with the operation of the biological neuron. The frequency of output pulses showed similar behavior to that of biological neuron, i.e. the pulses started being generated at same threshold voltage the pulse frequency increasing exponentially with the input voltage.;Using the excitatory synaptic circuit employing the MQW-IMD it was demonstrated that the frequency of the output pulses was linearly related with that of the input pulses behavior by the magnitude of the coupling capacitance. This simulates the excitatory synapses of the biological neuron. Inhibitory behavior, temporal summation, and summation over multiple synaptic inputs with individual weighting are also feasible.;The major features of the MQW-IMD are (1) The MQW-IMD operates at room temperature while a similar silicon IMD works only at low temperature such as 4.2 K; (2) The threshold voltage of the frequency characteristic is about 1 V while that of silicon counter part is larger than 10 V; (3) The circuit configuration is simple compared with other current approaches using transistors; (4) Since the power is mostly consumed at the time of pulsing, the power consumption is small. The MQW-IMD and the associated neural circuit are suitable for the high development of artificial neural systems. (Abstract shortened with permission of author.)
机译:这项工作涉及一种称为多量子阱注入模式器件(MQW-IMD)的新型半导体器件的设计,制造和表征。 MQW-IMD在由负载电阻器和电容器组成的简单电路中产生类似于神经元的脉冲串输出,其脉冲特性类似于生物神经元。 MQW-IMD被提议作为生物神经元的电子类似物,并且可以用作实现人工神经网络的处理元件。;该设备由n个组成;该设备的性能与生物学的操作进行了比较神经元。输出脉冲的频率表现出与生物神经元类似的行为,即脉冲在相同的阈值电压下开始产生,脉冲频率随输入电压呈指数增加。;使用MQW-IMD的兴奋性突触电路,证明了输出脉冲的频率通过耦合电容的大小与输入脉冲的行为线性相关。这模拟了生物神经元的兴奋性突触。抑制行为,时间求和以及具有单独权重的多个突触输入的求和也是可行的。MQW-IMD的主要特征是(1)MQW-IMD在室温下运行,而类似的硅IMD仅在低温下运行例如4.2 K; (2)频率特性的阈值电压约为1 V,而硅对应部分的阈值电压大于10 V; (3)与其他使用晶体管的电流方法相比,电路配置简单; (4)由于在脉动时大部分消耗功率,所以功耗很小。 MQW-IMD和相关的神经回路适用于人工神经系统的高度发展。 (摘要经作者许可缩短。)

著录项

  • 作者

    Song, Chungkun.;

  • 作者单位

    University of Cincinnati.;

  • 授予单位 University of Cincinnati.;
  • 学科 Engineering Electronics and Electrical.;Artificial Intelligence.
  • 学位 Ph.D.
  • 年度 1992
  • 页码 328 p.
  • 总页数 328
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:50:19

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