Resonant tunneling measurements of size-induced strain relaxation.

摘要

Lattice mismatch strain available in such semiconductor heterostructures as Si/SiGe or GaAs/AlGaAs can be employed to alter the electronic and optoelectronic properties of semiconductor structures and devices. When deep submicron structures are fabricated from strained material, strained layers relax by sidewall expansion giving rise to size- and geometry-dependent strain gradients throughout the structure. This thesis describes a novel experimental technique to probe the size-induced strain relaxation by studying the tunneling current characteristics of strained p-type Si/SiGe resonant tunneling diodes.; Our current-voltage measurements on submicron strained p-Si/SiGe double- and triple-barrier resonant tunneling structures as a function of device diameter, D, provide experimental access to both the average strain relaxation (which leads to relative shifts in the tunneling current peak positions) and strain gradients (which give rise to a fine structure in the current peaks due to inhomogeneous strain-induced lateral quantization). We find that strain relaxation is significant, with a large fraction of the strain energy relaxed on average in D ≤ 0.25 m m devices. Further, the in-plane potentials that arise from inhomogeneous strain gradients are large. In the D ∼ 0.2 m m devices, the corresponding lateral potentials are approximately parabolic exceeding ∼ 25 meV near the perimeter. These potentials create discrete hole states in double-barrier structures (single well), and coupled hole states in triple-barrier structures (two wells). Our results are in excellent agreement with finite-element strain calculations in which the strained layers are permitted to relax to a state of minimum energy by sidewall expansion.; Size-induced strain relaxation will undoubtedly become a serious technological issue once strained devices are scaled down to the deep submicron regime. Interestingly, our calculations predict and our measurements are consistent with the appearance of a ring-like confined hole ground state at the perimeter of sufficiently small (D ≤ 0.15 m m) p-Si/SiGe devices. Strain relaxation thus promises a novel approach to the fabrication of "ideal" rings with very small diameters.