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Elucidation of the mechanisms of gating in the Kv4.3 voltage-sensitive potassium channel.

机译:阐明了Kv4.3电压敏感钾通道中的门控机制。

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摘要

The molecular and biophysical mechanisms by which Kv4 voltage-sensitive K+ channels respond to adjustments in membrane voltage are presently unresolved. With respect to inactivation gating, there is strong evidence that Shaker-like N- and P/C-type mechanisms are not involved. Kv4 channels also display prominent inactivation from pre-activated closed-states (closed-state inactivation, CSI), a process which is absent in Shaker (Kv1) channels. As in Shaker, voltage sensitivity in Kv4 is thought to be conferred by positively charged residues localized to the fourth transmembrane segment (S4) of the voltage-sensing domain. Kv1 channels possess four basic arginine residues (R1 - R4) that are responsible for carrying the majority of gating charge. In Kv4 channels, however, R1 is replaced by a neutral valine at position 287. In the absence of confirmed mechanisms underlying several gating transitions in Kv4.3, I hypothesized that the S4 voltage sensor domain may serve a primary regulatory role, specifically for the processes of closed-state inactivation and recovery. To test this hypothesis I analyzed the effects of charge elimination at positions 290, 293, and 296 (R2 - R4 using Shaker nomenclature) by mutation to the uncharged residue alanine (A). The R to A mutants eliminated individual positive charge while significantly reducing side chain volume and hydrophilic character. Their novel effects on gating may thus have been the result of electrostatic and/or structural perturbations. To address this issue, I next comparatively analyzed arginine to glutamine (R to Q) mutations at the same three positions. This maneuver maintained positive charge elimination of the R to A mutants while partially restoring native side chain volume and hydrophilic properties. To test whether the lack of charge at position 287 was responsible for noted differences in voltage sensitivity between Kv1 and Kv4.3, I next examined the role of charge addition at the site by mutation to arginine. With all three studies implicating a primary role for the S4 voltage sensor in regulating CSI and recovery, I examined these processes in greater detail through application of elevated extracellular potassium in the presence or absence of KChIP2b. Lastly, I explored the importance of potential electrostatic interactions between S2 and S3 negatively charged residues and positively charged K299 and R302 in S4. Through these studies I conclude that the S4 domain in Kv4.3 is responsible for regulating not only activation and deactivation processes, but also those of closed-state inactivation and recovery. In contrast to Shaker channels, closed-state inactivation appears to possess inherent voltage-dependence, or is uniquely coupled to activation. With the kinetics of deactivation and recovery processes paralleled across the range of conditions analyzed, I suggest that these processes are likely coupled. Finally, it is suggested that S4 may be oriented in the transmembrane electrical field unique from its position in Shaker, so that the transmembrane electrical field resides across R290 in the resting state. Taken together, these results support the argument that a more complicated gating model exists in Kv4.3 as compared to Kv1 channels, and that the regulation of this gating is determined largely by the S4 voltage sensor domain.
机译:Kv4电压敏感的K +通道响应膜电压调节的分子和生物物理机制目前尚未解决。关于灭活门控,有充分的证据表明,不涉及摇床状的N型和P / C型机制。 Kv4通道还显示了从预激活的关闭状态显着的失活(关闭状态失活,CSI),这是摇床(Kv1)通道中不存在的过程。与Shaker中一样,Kv4中的电压敏感性被认为是由位于电压感应域的第四跨膜片段(S4)上的带正电荷的残基赋予的。 Kv1通道具有四个基本精氨酸残基(R1-R4),它们负责携带大多数选通电荷。但是,在Kv4通道中,R1在位置287处被中性缬氨酸取代。由于在Kv4.3中没有几个门控跃迁的潜在机制得到证实,我假设S4电压传感器域可能起主要的调节作用,特别是对于闭环失活和恢复的过程。为了检验该假设,我分析了通过突变为不带电荷的残基丙氨酸(A)消除位置290、293和296(使用Shaker命名法的R2-R4)电荷的影响。 R至A突变体消除了单个正电荷,同时显着减小了侧链体积和亲水性。因此,它们对门控的新颖影响可能是静电和/或结构扰动的结果。为了解决这个问题,我接下来在相同的三个位置上比较了精氨酸到谷氨酰胺(R到Q)的突变。该操作保持了R至A突变体的正电荷消除,同时部分地恢复了天然侧链的体积和亲水性。为了测试Kv1和Kv4.3之间电压敏感性的显着差异是否是由于287位电荷不足引起的,接下来我检查了通过精氨酸突变在该位点添加电荷的作用。所有这三项研究都涉及S4电压传感器在调节CSI和恢复中的主要作用,我通过在存在或不存在KChIP2b的情况下应用升高的细胞外钾来更详细地研究了这些过程。最后,我探讨了S4中S2和S3带负电的残基与K299和R302带正电的潜在静电相互作用的重要性。通过这些研究,我得出结论,Kv4.3中的S4结构域不仅负责调节激活和失活过程,而且还负责封闭状态的失活和恢复过程。与振荡器通道相反,关闭状态的失活似乎具有固有的电压依赖性,或与激活唯一相关。考虑到失活和恢复过程的动力学在所分析的条件范围内平行,我建议这些过程可能是耦合的。最后,建议将S4定向在与其在Shaker中的位置不同的跨膜电场中,以使跨膜电场在静止状态下跨R290驻留。综上所述,这些结果支持这样一种论点,即与Kv1通道相比,Kv4.3中存在更复杂的门控模型,并且该门控的调节主要由S4电压传感器域决定。

著录项

  • 作者

    Skerritt, Matthew Richard.;

  • 作者单位

    State University of New York at Buffalo.;

  • 授予单位 State University of New York at Buffalo.;
  • 学科 Biophysics General.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 94 p.
  • 总页数 94
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 生物物理学;
  • 关键词

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