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Low -noise local oscillator design techniques using a DLL-based frequency multiplier for wireless applications.

机译:使用基于DLL的倍频器的低噪声本地振荡器设计技术,用于无线应用。

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摘要

The fast growing demand of wireless communications for voice and data has driven recent efforts to dramatically increase the levels of integration in RF transceivers. One approach to this challenge is to implement all the RF functions in the low-cost CMOS technology, so that RF and baseband sections can be combined in a single chip. This in turn dictates an integrated CMOS implementation of the local oscillators with the same or even better phase noise performance than its discrete counterpart, generally a difficult task using conventional approaches with the available low-Q integrated inductors. This is a particularly severe problem in RF systems such as AMPS, where the channel spacing is small and close-in phase noise must be extremely low.;In this thesis the fundamental performance limit of a local oscillator design using a DLL-based frequency multiplier is investigated. The distinctive timing jitter accumulation pattern of a DLL-based frequency multiplier is analyzed in detail to predict the phase noise performance based on the thermal-noise-induced jitter of the source-coupled differential CMOS delay cell implementation. The result suggests an unique phase noise signature compared to a PLL approach using a VCO. Due to the limited timing jitter accumulation in a DLL, the close-in phase noise performance of the DLL-based frequency multiplier is much lower than that of a monolithic VCO.;The specific research contributions of this work include (1) proposing a new local oscillator architecture using a DLL-based frequency multiplier that breaks the traditional LO phase noise limitations, (2) an analytical model that describes the phase noise performance of the proposed local oscillator architecture, (3) the application of the DLL-based frequency multiplier to a monolithic CMOS low-phase-noise local oscillator for cellular telephone applications.;To demonstrate the proposed concept, a fully integrated CMOS local oscillator utilizing a DLL-based frequency multiplier technique to synthesize a 900MHz carrier with low close-in phase noise was designed. This prototype, implemented in a standard 0.35mum CMOS technology, achieves --123dBc/Hz phase noise at 60kHz offset while dissipating 130mW from a 3.3V supply, meeting the requirements of the IS-137 dual-mode standard.
机译:无线通信对语音和数据的快速增长的需求推动了最近的努力,以极大地提高RF收发器的集成度。解决这一难题的一种方法是在低成本CMOS技术中实现所有RF功能,以便可以将RF和基带部分组合在一个芯片中。反过来,这要求以与离散振荡器相同或什至更好的相位噪声性能来实现本地振荡器的集成CMOS实现,这通常是使用具有低Q集成电感器的常规方法来完成的艰巨任务。在诸如AMPS之类的RF系统中,这是一个特别严重的问题,在该系统中,通道间隔很小,并且近相噪声必须非常低。;在本文中,使用基于DLL的倍频器的本地振荡器设计的基本性能限制被调查。详细分析了基于DLL的倍频器的独特时序抖动累积模式,以基于源耦合差分CMOS延迟单元实现的热噪声引起的抖动来预测相位噪声性能。结果表明,与使用VCO的PLL方法相比,具有独特的相位噪声特征。由于DLL中的定时抖动累积有限,因此基于DLL的倍频器的近相噪声性能远低于单片VCO .;这项工作的具体研究贡献包括(1)提出了一种新的方法。使用基于DLL的倍频器打破传统的LO相位噪声限制的本地振荡器体系结构,(2)一个描述所提出的本地振荡器体系结构的相位噪声性能的分析模型,(3)基于DLL的倍频器的应用为了证明所提出的概念,采用基于DLL的倍频器技术的全集成CMOS本地振荡器,用于合成具有低近相噪声的900MHz载波,从而证明了所提出的概念。设计。该原型采用标准0.35mum CMOS技术实现,在60kHz偏移下可实现--123dBc / Hz的相位噪声,同时可从3.3V电源消耗130mW的功率,从而满足IS-137双模标准的要求。

著录项

  • 作者

    Chien, George.;

  • 作者单位

    University of California, Berkeley.;

  • 授予单位 University of California, Berkeley.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 175 p.
  • 总页数 175
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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