Temperature performance of indium phosphide- and gallium antimonide-based laser diodes.

摘要

As a result of comprehensive characterization of 1.3 mum multi-quantum-well (MQW) InGaAsP/InP lasers with different doping profiles it was shown that tuning of the p-doping profile (p-i junction placement) allows us to simultaneously maximize external efficiency and minimize device threshold current. This approach permits the fabrication of MQW devices with a record setting threshold current of approximately 80 A/cm2 per well for devices with 9 QWs at room temperature.; Measurements of the heterobarrier leakage current, optical gain and loss for 2.3 mum QW In(Al)GaAsSb/GaSb broad-contact and ridge-waveguide lasers have been performed for the first time. A significant value of the Auger coefficient and the temperature dependence of the laser gain are shown to be the major factors determining the temperature dependence of the threshold current.