首页> 外文学位 >The role of complexing agents in the chemical-mechanical planarization of copper.
【24h】

The role of complexing agents in the chemical-mechanical planarization of copper.

机译:络合剂在铜化学机械平面化中的作用。

获取原文
获取原文并翻译 | 示例

摘要

The present dissertation study investigates the effect of complexing agents on the electrochemical dissolution and chemical mechanical planarization of copper, with the aim of improving our understanding of the mechanisms responsible for planarization and material removal in copper chemical mechanical planarization (CMP).; In the first stage of the study, the electrochemistry of copper was examined in aqueous solutions of several complexing agents, including glycine, ethylenediamine and EDTA. The effect of the complexing agents on copper dissolution was delineated by comparing the electrochemical behavior of copper in solutions with and without complexing agents.; The effects of glycine and EDTA on copper CMP were examined using the polishing behavior of copper in the absence of complexing agents as the baseline. Regardless of the nature of the chemical environment, in-situ electrochemical studies during polishing revealed no significant changes in the polarization behavior in regions of active dissolution, other than modest increases in current density that probably reflected enhanced mass transport.; It was found that under conditions that give passivity, glycine would enhance the planarization efficiency as it promotes higher material removal from protruding regions. The copper dissolution and polishing behavior was also examined in glycine solutions or slurries containing H2O 2. Passivation behavior was observed at pH4 and 9 (neither of these is neutral) in 10−2 M glycine above certain H2O 2 concentrations, suggesting the formation of higher copper oxides such as Cu2O3 and CuO2.; The effect of electrochemical polarization on the copper removal rates during polishing was also investigated in EDTA slurries. The experimental results demonstrated synergistic interactions between the electrochemical and mechanical forces in the copper CMP process, indicating that enhanced material removal and planarization could only be achieved when the electrochemical and mechanical components act together in a favorable manner. (Abstract shortened by UMI.)
机译:本论文研究了络合剂对铜的电化学溶解和化学机械平面化的影响,目的是增进我们对铜化学机械平面化(CMP)中负责平面化和材料去除的机理的理解。在研究的第一阶段,在几种络合剂(包括甘氨酸,乙二胺和EDTA)的水溶液中检查了铜的电化学。通过比较有和没有络合剂的溶液中铜的电化学行为,描述了络合剂对铜溶解的影响。使用铜在没有络合剂的情况下的抛光行为作为基线,检验了甘氨酸和EDTA对铜CMP的影响。不论化学环境的性质如何,抛光过程中的原位电化学研究均表明,在有效溶解区域,极化行为没有显着变化,除了电流密度的适度增加外,这可能反映了质量传输的增强。 。;已经发现,在赋予钝性的条件下,甘氨酸将促进平面化效率,因为它促进了从突出区域的更高材料去除。还研究了甘氨酸溶液或含H 2 O 2 的浆料中铜的溶解和抛光行为。在某些H 2 O 2 浓度以上的10 -2 M甘氨酸中,在pH4和9(都不是中性)下观察到钝化行​​为,建议形成较高的铜氧化物,例如Cu 2 O 3 和CuO 2 。在EDTA浆料中,还研究了电化学极化对抛光过程中铜去除速率的影响。实验结果表明,在铜CMP工艺中,电化学力和机械力之间存在协同作用,这表明只有在电化学和机械成分共同发挥良好作用的情况下,材料的去除和平坦化才能实现。 (摘要由UMI缩短。)

著录项

  • 作者

    Aksu, Serdar.;

  • 作者单位

    University of California, Berkeley.;

  • 授予单位 University of California, Berkeley.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 139 p.
  • 总页数 139
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号