Development of silicon nanowire field effect transistors.

摘要

An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 -- 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration.