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Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization.

机译:应变诱导的自卷起的半导体微型/纳米管:制造和表征。

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摘要

Strain-induced self-rolled-up semiconductor nanotubes are a new type of building block for three-dimensional architectures. Semiconductor nanotubes (SNTs) take advantage of the lattice mismatch between different layers and are formed when the strained semiconductor layers are released from the substrate by selective etching of the sacrificial layer. They are produced by a combination of "top-down" and "bottom-up" approaches, using the epitaxial growth of strained films and conventional fabrication processes such as lithography and wet/dry etching. Taking advantage of "bottom-up" approaches, nanoscale objects can be achieved; by using a "top-down" approach, their positions can be precisely controlled, and it is possible to form a large-area assembly of ordered tubes.;Tube diameter is determined by the thickness and amount of misfit strain which is accommodated in epitaxial films and can vary from a few nanometers to tens of microns. The shapes of three-dimensional (3D) structures are determined by the crystal orientation of the defined mesa patterns, and they can be formed as 3D tubular structures, helices, or just curved structure. The tube wall consists of compound semiconductor materials such as GaAs, AlxGa 1-xAs, and InxGa1-xAs and therefore it forms a heterostructure. As a result, optical gain media such as quantum wells and quantum dots can be embedded in the tube wall and these semiconductor tubes have potential for application as optoelectronic devices.;In this dissertation, metal-organic chemical vapor deposition (MOCVD) has been used to grow epitaxial layers. Variation of tube diameter, which depends on the thickness of layers and the amount of In content in the In xGa1-xAs layer, and the orientation dependence of tube formation were systematically investigated. The precise controllability of structural and spatial positioning of tubes has been achieved by understanding effects of geometry on tube formation, and perfectly ordered large arrays of tubes were realized. Also, GaAs quantum wells and InAs quantum dots have been embedded in the tube wall, and their optical properties were studied, using the micro-PL system. In rolled-up tube structures, strain plays a significant role in engineering the band structure, and therefore peak positions in the photoluminescence spectrum can be tuned continuously as a function of tube curvature and were experimentally investigated.;By taking advantage of strain relaxation of the strained films, different types of tubes are formed. SiN tubes, consisting of a compressively and tensile strained bilayer and tubes that were functionalized with different metals have been demonstrated. These tubes are used for the fabrication of high density carbon nanotubes and biosensor application using the micro-Raman system.;Chapter 1 presents a brief overview of a new tubular architecture that is formed by self-rolling of the strained semiconductor films and describes the formation mechanism of SNTs.;Chapter 2 outlines fabrication techniques to produce strain-induced self-rolled-up tubes. Epitaxial growth using a MOCVD reactor and two fabrication methods using wet or dry etching techniques will be discussed.;Chapter 3 demonstrates the formation method, process, and dependence on the crystal orientation and rolling direction of the strained thin membranes. Also, the geometry effect on the rolling behavior of the strained membrane will be discussed.;Chapter 4 presents the optical properties of GaAs quantum well tubes. Optical properties of microtubes where the GaAs quantum well is embedded in the tube wall as the optical gain medium will be studied using the photoluminescence measurement system.;Chapter 5 demonstrates several types of hybrid tubes. Metal/semiconductor, silicon nitride, and metal/silicon nitride tubes will be demonstrated. These different types of tubes can be implemented for a variety of applications and utilized for different purposes.;Chapter 6 shows the preliminary results of SNT applications. SNTs can be utilized for realizing high density ordered arrays of single-wall nanotubes and micro/nano-fluidic channels, by taking advantage of the unique property of the scrolled-up tubular structure which can serve as a rolling vehicle.
机译:应变诱导的自卷起的半导体纳米管是用于三维架构的新型构建基块。半导体纳米管(SNT)利用了不同层之间的晶格失配优势,并且在通过选择性腐蚀牺牲层从衬底释放应变半导体层时形成了半导体纳米管。它们是通过“自上而下”和“自下而上”方法的组合使用应变膜的外延生长和常规制造工艺(如光刻和湿/干蚀刻)生产的。利用“自下而上”的方法,可以实现纳米级目标。通过使用“自上而下”的方法,可以精确地控制它们的位置,并且可以形成大面积的有序管组件。管的直径由外延膜中容纳的厚度和失配应变的数量决定。薄膜的厚度从几纳米到几十微米不等。三维(3D)结构的形状由定义的台面图案的晶体取向确定,它们可以形成为3D管状结构,螺旋或仅弯曲的结构。管壁由GaAs,AlxGa 1-xAs和InxGa1-xAs等化合物半导体材料组成,因此形成异质结构。结果,可以在管壁中嵌入诸如量子阱和量子点之类的光学增益介质,并且这些半导体管具有作为光电器件应用的潜力。在本文中,已使用金属有机化学气相沉积(MOCVD)生长外延层。系统地研究了管直径的变化,该变化取决于层的厚度和In xGa1-xAs层中In含量的大小以及管形成的方向依赖性。通过了解几何形状对管形成的影响,可以实现管的结构和空间定位的精确可控性,并实现了排列整齐的大型管阵列。此外,GaAs量子阱和InAs量子点已嵌入到管壁中,并使用micro-PL系统研究了它们的光学性质。在卷起的管结构中,应变在带结构的工程设计中起着重要作用,因此,可以根据管曲率连续调整光致发光光谱中的峰值位置,并进行了实验研究。应变膜,形成不同类型的管。已经证明了由压缩和拉伸应变双层组成的SiN管以及用不同金属功能化的管。这些管用于微拉曼系统的高密度碳纳米管的制造和生物传感器的应用。第一章简要概述了通过应变半导体膜的自卷形成的新型管状结构,并描述了其形成过程。 SNTs的机理。第二章概述了制造应变诱导自卷管的制造技术。将讨论使用MOCVD反应器进行外延生长以及使用湿法或干法蚀刻技术的两种制造方法。第三章说明了形成方法,工艺以及应变薄膜的晶体取向和滚动方向的依赖性。并且,将讨论几何形状对应变膜的滚动行为的影响。第四章介绍了GaAs量子阱管的光学特性。将使用光致发光测量系统研究将GaAs量子阱嵌入在管壁中作为光增益介质的微管的光学特性。第5章演示了几种类型的混合管。将说明金属/半导体,氮化硅和金属/氮化硅管。这些不同类型的管可以实现各种应用,并用于不同的目的。第6章显示了SNT应用的初步结果。通过利用可以用作滚动载体的向上滚动的管状结构的独特特性,可以将SNT用于实现单壁纳米管和微/纳米流体通道的高密度有序阵列。

著录项

  • 作者

    Chun, Ik Su.;

  • 作者单位

    University of Illinois at Urbana-Champaign.;

  • 授予单位 University of Illinois at Urbana-Champaign.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 118 p.
  • 总页数 118
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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