Electroreflectance of wurtzite gallium nitride, aluminum gallium nitride, and aluminum nitride.

摘要

Electroreflectance was performed on MBE grown sample of wurtzite structured AlxGai1-xN in the spectral region of 2.5 to 7.0 eV. Optical transitions were recorded and evaluated for these materials. The aluminum concentrations used were x = 0.00, 0.18, 0.26, 0.36, 0.39, 0.74, and 1.00. The results of the measurements show a bowing parameter of 1.12 eV and donor-accepter pair transitions below the band gap with a maximum peak centered at 2.72 eV for all compositions.