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Applications of silicon nanostructures compatible with existing manufacturing technology.

机译:与现有制造技术兼容的硅纳米结构的应用。

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摘要

This work has focused on the fabrication, manipulation, and characterization of crystalline silicon at nanoscale dimensions for electrical and optical applications. Nanocrystalline silicon can be fabricated in two basic ways, self assembly of silicon atoms or erosion of larger crystals.; Self assembly has been explored with the technique of thermal crystallization of thin amorphous silicon (a-Si) layers. Using a well characterized sputter deposition process, a-Si layers as thin as 3 nm, sandwiched between barrier layers of silicon dioxide, were crystallized with a combination of rapid thermal processing and furnace annealing. This process creates high density continuous layers of silicon nanocrystals with size distribution controlled by the original a-Si thickness. This process is compatible with silicon microelectronic processing and can be used as charge storage elements in semiconductor memories. Of particular interest in this study was the effect of surface topography on crystallization dynamics and the potential for introducing lateral in-plane order to this structure. As part of this research, a new technique for preparing ultrathin suspended membranes for transmission electron microscopy (TEM) was developed and used for material characterization.; Electrochemical etching of single crystal and multicrystalline silicon to form porous silicon (PSi) with nanoscale features was also investigated. With this process, crystalline silicon is exposed to a solution containing hydrofluoric acid in a specially designed etching cell. When an electric current is passed through the cell, the resulting chemical reaction forms pores in the silicon surface that propagate into the substrate, leaving an interconnected nanoscale network of crystalline silicon. Using this process, thin broadband antireflective films were developed for silicon solar cell applications and superior performance to existing antireflective coatings was demonstrated.; Although no commercial products have yet incorporated nanocrystalline silicon as a design element, this work focused on realistic applications of this material that could be implemented with existing technology.
机译:这项工作的重点是用于电气和光学应用的纳米级晶体硅的制造,处理和表征。纳米晶体硅可以用两种基本方法制造,即硅原子的自组装或较大晶体的腐蚀。自组装已经用非晶硅薄(a-Si)层的热结晶技术进行了探索。使用特征明确的溅射沉积工艺,通过快速热处理和炉内退火相结合,使夹在二氧化硅阻挡层之间的3 nm薄的a-Si层结晶。该工艺产生了高密度的硅纳米晶体连续层,其尺寸分布受原始非晶硅厚度的控制。该过程与硅微电子处理兼容,并且可用作半导体存储器中的电荷存储元件。在这项研究中,特别令人感兴趣的是表面形貌对结晶动力学的影响以及向该结构引入横向平面内次序的潜力。作为这项研究的一部分,开发了一种用于透射电子显微镜(TEM)的超薄悬浮膜制备新技术,并将其用于材料表征。还研究了单晶硅和多晶硅的电化学刻蚀以形成具有纳米级特征的多孔硅(PSi)。通过这种工艺,在专门设计的蚀刻池中,晶体硅暴露于含有氢氟酸的溶液中。当电流通过电池时,产生的化学反应会在硅表面形成孔,这些孔传播到基板中,从而留下一个互连的纳米级晶体硅网络。使用该工艺,开发了宽带减反射膜用于硅太阳能电池应用,并证明了其性能优于现有的减反射涂层。尽管尚无商业产品将纳米晶硅作为设计元素,但这项工作的重点是可以用现有技术实现的这种材料的实际应用。

著录项

  • 作者

    Striemer, Christopher C.;

  • 作者单位

    University of Rochester.;

  • 授予单位 University of Rochester.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 136 p.
  • 总页数 136
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:43:52

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